To get output 1 for the following circuit, the correct choice for the input is

                       

(1) A=1, B=0, C=0       

(2) A=1, B=1, C=0

(3) A=1, B=0, C=1       

(4) A=0, B=1, C=0

Subtopic:  Logic gates |
 85%
From NCERT
NEET - 2016
To view explanation, please take trial in the course.
NEET 2021 - Achiever Batch - Aryan Raj Singh
Hints
To view explanation, please take trial in the course.
NEET 2021 - Achiever Batch - Aryan Raj Singh

An n-p-n transistor is connected in the common base configuration in a given amplifier. A load resistance of 800Ω is connected in the collector circuit and the voltage drop across it is 0.8 V. If the current amplification factor is 0.96 and the input resistance of the circuits is 192 Ω the voltage gain and the power gain of the amplifier will respectively be

1. 3.69,3.84
2. 4,4
3. 4,3.69
4. 4,3.84

Subtopic:  Applications of Transistor (OLD NCERT) |
 64%
From NCERT
NEET - 2016
To view explanation, please take trial in the course.
NEET 2021 - Achiever Batch - Aryan Raj Singh
Hints
To view explanation, please take trial in the course.
NEET 2021 - Achiever Batch - Aryan Raj Singh

If in a p-n junction, a square input signal of 10 V is applied as shown, then the output across RL will be:
              

1. 2.
3. 4.
Subtopic:  Rectifier |
 65%
From NCERT
NEET - 2015
To view explanation, please take trial in the course.
NEET 2021 - Achiever Batch - Aryan Raj Singh
Hints
To view explanation, please take trial in the course.
NEET 2021 - Achiever Batch - Aryan Raj Singh

In the given figure, a diode D is connected to an external resistance R = 100 Ω  and an e.m.f of 3.5 V. If the barrier potential developed across the diode is 0.5 V, the current in the circuit will be


1. 30mA

2. 40mA

3. 20mA

4. 35mA

Subtopic:  PN junction |
 71%
From NCERT
NEET - 2015
To view explanation, please take trial in the course.
NEET 2021 - Achiever Batch - Aryan Raj Singh
Hints
To view explanation, please take trial in the course.
NEET 2021 - Achiever Batch - Aryan Raj Singh

The given graph represents the V-I characteristic for a semiconductor device. Which of the following statement is correct?

1. It is a V-I characteristic for a solar cell where point A represents open-circuit voltage and point B represents short-circuit current.
2. It is for a solar cell and points A and B represent open-circuit voltage and current respectively.
3. It is for a photodiode and points A and B represent open-circuit voltage and current respectively.
4. It is for a LED and points A and B represent open-circuit voltage and short circuit current respectively.
Subtopic:  Applications of PN junction |
 67%
From NCERT
NEET - 2014
To view explanation, please take trial in the course.
NEET 2021 - Achiever Batch - Aryan Raj Singh
Hints

The barrier potential of a p-n junction depends on

(i)type of semiconductor material

(ii)amount of doping

(iii)temperature

Which one of the following is correct

1. (i) and (ii)only

2. (ii) only

3. (ii) and (iii)only

4. (i),(ii) and (iii)

Subtopic:  PN junction |
 75%
From NCERT
NEET - 2014
To view explanation, please take trial in the course.
NEET 2021 - Achiever Batch - Aryan Raj Singh
Hints

The output (x) of logic circuit shown in figure will be 

 

(1) X=A=·B=

(2) X=A.B¯

(3)X=A·B

(4)X=A+B¯

Subtopic:  Logic gates |
 66%
From NCERT
NEET - 2013
To view explanation, please take trial in the course.
NEET 2021 - Achiever Batch - Aryan Raj Singh
Hints
To view explanation, please take trial in the course.
NEET 2021 - Achiever Batch - Aryan Raj Singh

C and Si both have same lattice structure,having 4 bonding electrons in each.However, C is insulator whereas Si is intrinsic semiconductor. This is because 

1. in case of C, the valence band is not completely filled at absolute zero temperature

2. in case of C,the condition band is partly filled even at absolute zero temperature 

3. the four bonding electrons in the case of C lie in the second orbit,Whereas in the case of Si they lie in the third

4 .the four bonding electrons in the case of C lie in the third orbit, whereas for Si they lie in the fourth orbit

Subtopic:  Types of Semiconductors |
 70%
From NCERT
NEET - 2012
To view explanation, please take trial in the course.
NEET 2021 - Achiever Batch - Aryan Raj Singh
Hints
To view explanation, please take trial in the course.
NEET 2021 - Achiever Batch - Aryan Raj Singh

The figure shows a logic circuit with two inputs A and B and the output C.The voltage wave forms across A, B and C are as given.The logic circuit gate is 

1. OR gate                                          2. NOR gate

3. AND gate                                        4. NAND gate

Subtopic:  Logic gates |
 77%
From NCERT
NEET - 2012
To view explanation, please take trial in the course.
NEET 2021 - Achiever Batch - Aryan Raj Singh
Hints
To view explanation, please take trial in the course.
NEET 2021 - Achiever Batch - Aryan Raj Singh

The input resistance of a silicon transistor is

100 Ω. Base current is changed by 40 μA

which results in a change in collector current

by 2 mA. This transistor is used as a common-

emitter amplifier with a load resistance of 4 kΩ.

The voltage gain of the amplifier is

1. 2000

2. 3000

3. 4000

4. 1000

Subtopic:  Transistor (OLD NCERT) |
 81%
From NCERT
NEET - 2012
To view explanation, please take trial in the course.
NEET 2021 - Achiever Batch - Aryan Raj Singh
Hints
To view explanation, please take trial in the course.
NEET 2021 - Achiever Batch - Aryan Raj Singh