In the given figure, a diode D is connected to an external resistance R=100 and an e.m.f. of 3.5 V. If the barrier potential developed across the diode is 0.5 V, the current in the circuit will be:
1. 30 mA
2. 40 mA
3. 20 mA
4. 35 mA
If in a p-n junction, a square input signal of 10 V is applied as shown,
then the output across RL will be:
1.
2.
3.
4.
Which logic gate is represented by the following combination of logic gates?
The given graph represents the V-I characteristic for a semiconductor device.
Which of the following statement is correct?
1. | It is a V-I characteristic for the solar cell where point A represents open-circuit voltage and point B short circuit current. |
2. | It is for a solar cell and points A and B represent open-circuit voltage and current, respectively. |
3. | It is for a photodiode and points A and B represent open-circuit voltage and current respectively. |
4. | It is for a LED and points A and B represent open circuit voltage and short circuit current, respectively. |
The barrier potential of a p-n junction depends on:
(a) type of semiconductor material
(b) amount of doping
(c) temperature
Which one of the following is correct?
1. (a) and (b) only
2. (b) only
3. (b) and (c) only
4. (a),(b) and (c)
1. | Electrons are minority carriers and pentavalent atoms are dopants. |
2. | Holes are minority carriers and pentavalent atoms are dopants. |
3. | Holes are the majority carriers and trivalent atoms are dopants. |
4. | Electrons are the majority carriers and trivalent atoms are dopants. |
The output (X) of the logic circuit shown in the figure will be:
1. X =
2. X = A.B
3. X =
4. X =
1. | the attraction of free electrons of the n-region. |
2. | the higher hole concentration in the p-region than that in the n-region. |
3. | the higher concentration of electrons is in the n-region than that in the p-region. |
4. | the potential difference across the p-n junction. |
Two ideal diodes are connected to a battery as shown in the circuit. The current supplied by the battery is:
1. 0.75 A
2. zero
3. 0.25 A
4. 0.5 A