1. | number density of free current carries increases |
2. | relaxation time increases |
3. | both number density of carries and relaxation time increase |
4. | number density of current carriers increases, relaxation time decreases but the effect of decrease in relaxation time is much less than the increase in number density |
1. | 1 and 3 both correspond to forward bias of junction. |
2. | 3 corresponds to forward bias of junction and 1 corresponds to reverse bias of junction. |
3. | 1 corresponds to forward bias and 3 corresponds to reverse bias of junction. |
4. | 3 and 1 both correspond to reverse bias of junction. |
In the figure given below, assuming the diodes to be ideal,
1. | D1 is forward biased and D2 is revers-biased and hence current flows from A to B. |
2. | D2 is forward biased and D1 is reverse-biased and hence no current flows from B to A and vice-versa. |
3. | D1 and D2 are both forward-biased and hence current flows from A to B. |
4. | D1 and D2 are both reverse-biased and hence no current flows from A to B and vice-versa. |
1. | an anti-particle of electron. |
2. | a vacancy created when an electron leaves a covalent bond. |
3. | absence of free electrons. |
4. | an artificially created particle. |
1. | would be zero at all times |
2. | would be like a half wave rectifier with positive cycles in output |
3. | would be like a half wave rectifier with negative cycles in output |
4. | would be like that of a full wave rectifier |
a. | electrons move from lower energy level to higher energy level in the conduction band |
b. | electrons move from higher energy level to lower energy level in the conduction band |
c. | holes in the valence band move from higher energy level to lower energy level |
d. | holes in the valence band move from lower energy level to higher energy level |
a. | there are no mobile charges |
b. | equal number of holes and electrons exist, making the region neutral |
c. | recombination of holes and electrons has taken place |
d. | immobile charged ions exist |