In the energy band diagram of a material shown below, the open circles and filled circles denote holes and electrons respectively. The material is a/an: 

Identify the incorrect statement from the following:

Carbon, Silicon, and Germanium atoms have four valence electrons each. Their valence and conduction bands are separated by energy gaps represented by \(\left(E_g\right)_C,(E_g)_{Si}~\text{and}~(E_g)_{Ge}\) respectively. Which one of the following relationships is true in their case?

A semiconductor is known to have an electron concentration of $8\times {10}^{13}$ cm^-3 and a hole concentration of $5\times {10}^2$ cm^-3. The semiconductor is:

1.  n-type

2.  p-type

3.  intrinsic

4.  insulator

C and Si both have the same lattice structure, having 4 bonding electrons in each. However, C is an insulator whereas Si is an intrinsic semiconductor. This is because:

Pure Si at 500 K has equal number of electron $\left(n_{\mathit{e}}\right)$ and hole $\left(n_{\mathit{h}}\right)$ concentration of $1.5\times {10}^{\mathrm{16 }}{\mathrm{m}}^{-3}.$ Doping by indium increases $n_{\mathit{h}}$ to $4.5\times {10}^{22}$ ${\mathrm{m}}^{-3}.$ The doped semiconductor is of:

If the reverse bias in a junction diode is changed from \(5\) V to \(15\) V then the value of current changes from \(38\) \(\mu \text{A}\) to \(88\) \(\mu \text{A}.\) The resistance of junction diode will be:
1. \(4\times10^{5}\) 
2. \(3\times10^{5}\)
3. \(2\times10^{5}\)
4. \(10^{6}\)

The given circuit has two ideal diodes connected as shown in the figure below. The current flowing through the resistance R₁ will be:
     

What is the reading of the ideal ammeters A₁ and A₂ connected in the given circuit diagram, if $\mathrm{p}-\mathrm{n}$ junction diodes are ideal?

1. 2 A and zero

2. 3 A and 2 A

3. 2 A and 3 A

4. Zero and 2 A