Ncert Exercises & Solutions

Suppose an n-type wafer is created by doping Si crystal having $5 \times 10^{28} atoms / m^{3}$ with 1 ppm concentration of As. On the surface, 200 ppm boron is added to create 'P' region in this wafer. Considering $n_{i} = 1.5 \times 10^{16} m^{- 3}$ ,

(i) Calculate the densities of the charge carriers in the n & p regions.

(ii) Comment which charge carriers would contribute largely for the reverse saturation current when the diode is reverse biased.