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The following configuration of the logic gate is equivalent to
         
1.  NAND gate
2.  XOR gate
3.  OR gate
4.  NOR gate
 

In a common emitter transistor amplifier, the audio signal voltage across resistance of 1 k$\Omega$ is 2V. If the base resistance is 200$\Omega$ and the current amplification factor is 50, the input signal voltage will be
(1) 4 mV
(2) 8 mV
(3) 16 mV
(4) 32 mV
 

A transistor is operated in common emitter configuration at ${\mathrm{V}}_{\mathrm{c}} = 10\mathrm{V}.$ When base current is changed from 10mA to 30mA, it produces a change in emitter current from 2A to 4A, the current amplification factor is
1.  100
2.  99
3.  10
4.  9

$\mathrm{If} \mathrm{\alpha } \mathrm{be} \mathrm{the} \mathrm{current} \mathrm{gain} \mathrm{of} \mathrm{a} \mathrm{transistor} \mathrm{in} \mathrm{common} \mathrm{base} \mathrm{mode} \mathrm{and} \mathrm{\beta } \mathrm{be} \mathrm{the} \mathrm{current} \mathrm{gain} \mathrm{in}$
$\mathrm{common} \mathrm{emitter} \mathrm{mode} \mathrm{then}-$
1.  $\mathrm{\alpha } < 1$
2.  $\mathrm{\beta } > 1$
3.  $\mathrm{\alpha } = \frac{\mathrm{\beta }}{1 + \mathrm{\beta }}$
4.  All of these
 

When the temperature of the silicon sample is increased from $27° \mathrm{C}$ to $100° \mathrm{C}$, the conductivity of silicon will be
1.  Increased
2.  Decreased
3.  Remain same
4.  Zero
 

In a common-emitter transistor amplifier, the audio signal voltage across the collector is 3 V. The resistance of the collector is 3 k$\Omega$. If the current gain is 100 and the base resistance is 2 k$\Omega$, the voltage and power gain of the amplifier are:
1. 200 and 1000
2. 15 and 200
3. 150 and 15000
4. 20 and 2000

The given circuit has two ideal diodes connected as shown in the figure below. The current flowing through the resistance $R_1$ will be
   
(1) 2.5 A                     
(2) 10.0 A
(3) 1.43 A                   
(4) 3. 13 A

If in a p-n junction, a square input signal of 10 V is applied as shown, then the output across R_L will be:
              

1.		2.
3.		4.

In the given figure, a diode D is connected to an external resistance R = 100 Ω  and an e.m.f of 3.5 V. If the barrier potential developed across the diode is 0.5 V, the current in the circuit will be

1. 30mA
2. 40mA
3. 20mA
4. 35mA

The given graph represents the V-I characteristic for a semiconductor device. Which of the following statement is correct?

The barrier potential of a p-n junction depends on
(i)type of semiconductor material
(ii)amount of doping
(iii)temperature
Which one of the following is correct
1. (i) and (ii)only
2. (ii) only
3. (ii) and (iii)only
4. (i),(ii) and (iii)

Transfer characteristic [output voltage $\left(V_{\mathrm{o}}\right)$ vs input voltage $\left(V_i\right)$] for a base biased transistor in CE configuration is as shown in the figure. For using transistor as a switch, it is used:
                     
1. in region III
2. both in region (I) and (III)
3. in region II
4. in region I

Pure Si at 500 K has equal number of electron $\left(n_{\mathit{e}}\right)$ and hole $\left(n_{\mathit{h}}\right)$ concentration of $1.5\times {10}^{\mathrm{16 }}{\mathrm{m}}^{-3}.$ Doping by indium increases $n_{\mathit{h}}$ to $4.5\times {10}^{22}$ ${\mathrm{m}}^{-3}.$ The doped semiconductor is of:

A Zener diode, having breakdown voltage equal to 15 V, is used in a voltage regulator circuit, as shown in the figure. The current through the diode is:
                      
1. 10 mA
2. 15 mA
3. 20 mA
4. 5 mA

For the transistor circuit shown below, if $\mathrm{\beta }$ = 100, the voltage drop between emitter and base is 0.7 V, then the value of ${\mathrm{V}}_{\mathrm{CE}}$ will be:
              
1. 10 V
2. 5 V
3. 13 V
4. 0 V